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preliminary datasheet jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 1 single/dual low bias current, low voltage, rail-to-rail in p ut/out p ut cmos o p erational am p lifiers mos o p erational azv831/2 general description the azv831/azv832 is single/dual channels rail-to-rail input and output amplifier, which provides a wide input common-mode voltage range and output voltage swing capability for maximum signal swings in low supply voltage applications. the device is fully specified to operate from 1.6v to 5.0v single supply, or 0.8v and 2.5v dual supply applications. it features very low supply current dissipation 70 a per channel, which is well suitable for today's low-voltage and/or portable systems. the azv831/azv832 features optimal performance in very low bias current of 1pa, which enables the ic to be used for integrators, photodiode amplifiers, and piezoelectric sensors etc. the device has typical 0.5mv input offset voltage and provides 1mhz bandwidth. the azv831/azv832 adopts the latest packaging technology to meet the most demanding space-constraint appli cations. the azv831 is available in standard sot-23-5 and sc-70-5 packages. the azv832 is offered in the traditional msop-8 and soic-8 packages. features ? single supply voltage range: 1.6v to 5.5v ? ultra- low input bias current: 1pa (typ.) ? offset voltage: 0.5mv (typ.), 2.5mv (max.) ? rail-to-rail input v cm : 300mv beyond rails @ v cc =5v rail-to-rail output swing: 10k ? load: 4mv from rail 1k ? load: 25mv from rail ? supply current: 70a/amplifier ? unity gain stable gain bandwidth product: 1.0mhz ? slew rate: 0.45v/s @ v cc =5.0v ? operation ambient temperature range: -40oc to 85oc applications ? sensors ? photodiode amplification ? battery-powered instrumentation ? pulse blood oximeter, glucose meter figure 1. package types of azv831/azv832 sc-70-5 sot-23-5 soic-8 msop-8
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 2 azv831/2 pin configuration ks/k package sc-70-5/sot-23-5 output vcc vee in+ in- azv831 m/mm package (soic-8/msop-8) output 1 vcc in 1- output 2 in 1+ in 2- vee in 2+ azv832 figure 2. pin configuratio n of azv831/2 (top view) 1 2 34 5 1 2 3 4 8 7 6 5
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 3 azv831/2 function block diagram for azv831 for azv832/amplifier figure 3. functional block diagram of azv831/2 in- in+ vcc output class ab control + - + - vee 1 5 4 3 2 in1-/in2- in1+/in2+ vcc output1/ output2 class ab control + - + - vee 1,7 8 2,6 3,5 4
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 4 azv831/2 ordering information azv831/2 - circuit type g1: green package blank: tube ks: sc-70-5 (azv831) tr: tape & reel k: sot-23-5 (azv831) m: soic-8 (azv832) mm: msop-8 (azv832) package temperature range part number marking id packing type sc-70-5 -40 to 85 c azv831kstr-g1 l3 tape & reel sot-23-5 -40 to 85 c azv831ktr-g1 g4d tape & reel soic-8 -40 to 85 c azv832m-g1 832m-g1 tube azv832mtr-g1 832m-g1 tape & reel msop-8 -40 to 85 c azv832mm-g1 832mm-g1 tube AZV832MMTR-G1 832mm-g1 tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green.
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 5 azv831/2 absolute maximum ratings (note 1) parameter symbol value unit power supply voltage v cc 6.0 v differential input voltage v id 6.0 v input voltage v in -0.3 to v cc +0.5 v operating junction temperature t j 150 oc thermal resistance (junction to ambient) ja sc-70-5 270 oc /w sot-23-5 220 soic-8 150 msop-8 200 storage temperature range t stg -65 to 150 oc lead temperature (soldering,10 seconds) t lead 260 oc esd (human body model) 4000 v esd (machine model) 300 v note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. recommended operating conditions parameter symbol min max unit supply voltage v cc 1.6 5.5 v operation ambient temperature range t a -40 85 oc
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 6 azv831/2 1.6v dc electrical characteristics v cc =1.6v, v ee =0, v out =v cc /2, v cm =v cc /2, t a =25 c, unless otherwise noted. parameter symbol conditions min typ max unit input offset voltage v os 0.5 2.5 mv input bias current i b 1.0 pa input offset current i os 1.0 pa input common-mode voltage range v cm -0.2 1.8 v common-mode rejection ratio cmrr v cm =-0.2v to 1.8v 55 75 db large signal voltage gain g v r l =10k ? to v cc /2, v out =0.2v to 1.4v 90 110 db input offset voltage drift ? v os / ? t 2.0 v/ c output voltage swing from rail v ol /v oh r l =1k ? to v cc /2 30 50 mv r l =10k ? to v cc /2 3 15 output current sink i sink v out =v cc 8 10 ma source i source v out =0v 5 8.5 closed-loop output impedance z out f=10khz, a v =1 9 ? power supply rejection ratio psrr v cc =1.6v to 5.0v 66 80 db supply current (per amplifier) i cc v out =v cc /2, i out =0 70 90 a 1.6v ac electrical characteristics v cc =1.6v, v ee =0, v out =v cc /2, v cm =v cc /2, t a =25 c, unless otherwise noted. parameter symbol conditions min typ max unit gain bandwidth product gbp r l =100k ? 1.0 mhz slew rate (note 2) sr 1v step, c l =100pf, r l =10k ? 0.32 v/s phase margin m r l =100k ? 67 degrees total harmonic distortion+noise thd+n f=1khz, a v =1, v in =1v pp r l =10k ? , c l =100pf -70 db voltage noise density e n f=1khz 27 hz nv / note 2: number specified is the positive slew rate. .
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 7 azv831/2 1.8v dc electrical characteristics v cc =1.8v, v ee =0, v out =v cc /2, v cm =v cc /2, t a =25 c, unless otherwise noted. parameter symbol conditions min typ max unit input offset voltage v os 0.5 2.5 mv input bias current i b 1.0 pa input offset current i os 1.0 pa input common-mode voltage range v cm -0.2 2.0 v common-mode rejection ratio cmrr v cm =-0.2v to 2.0v 55 75 db large signal voltage gain g v r l =10k ? to v cc /2, v out =0.2v to 1.6v 90 112 db input offset voltage drift ? v os / ? t 2.0 v/ c output voltage swing from rail v ol /v oh r l =1k ? to v cc /2 25 50 mv r l =10k ? to v cc /2 3 15 output current sink i sink v out =v cc 12 16 ma source i source v out =0v 10 14 closed-loop output impedance z out f=10khz 9 ? power supply rejection ratio psrr v cc =1.6v to 5.0v 66 80 db supply current (per amplifier) i cc v out =v cc /2, i out =0 70 90 a 1.8v ac electrical characteristics v cc =1.8v, v ee =0, v out =v cc /2, v cm =v cc /2, t a =25 c, unless otherwise noted. parameter symbol conditions min typ max unit gain bandwidth product gbp r l =100k ? 1.0 mhz slew rate (note 2) sr 1v step, c l =100pf, r l =10k ? 0.34 v/s phase margin m r l =100k ? 67 degrees total harmonic distortion+noise thd+n f=1khz, a v =1, v in =1v pp r l =10k ? , c l =100pf -70 db voltage noise density e n f=1khz 27 hz nv / note 2: number specified is the positive slew rate.
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 8 azv831/2 3.0v dc electrical characteristics v cc =3.0v, v ee =0, v out =v cc /2, v cm =v cc /2, t a =25 c, unless otherwise noted. parameter symbol conditions min typ max unit input offset voltage v os 0.5 2.5 mv input bias current i b 1.0 pa input offset current i os 1.0 pa input common-mode voltage range v cm -0.3 3.3 v common-mode rejection ratio cmrr v cm =-0.3v to 1.8v 62 80 db v cm =-0.3v to 3.3v 58 75 large signal voltage gain g v r l =1k ? to v cc /2 , v out =0.2v to 2.8v 90 110 db r l =10k ? to v cc /2, v out =0.1v to 2.9v 95 115 input offset voltage drift ? v os / ? t 2.0 v/ c output voltage swing from rail v ol /v oh r l =1k ? to v cc /2 20 50 mv r l =10k ? to v cc /2 3 15 output current sink i sink v out =v cc 50 60 ma source i source v out =0v 50 65 closed-loop output impedance z out f=10khz 9 ? power supply rejection ratio psrr v cc =1.6v to 5.0v 66 80 db supply current (per amplifier) i cc v out =v cc /2, i out =0 70 90 a 3.0v ac electrical characteristics v cc =3.0v, v ee =0, v out =v cc /2, v cm =v cc /2, t a =25 c, unless otherwise noted. parameter symbol conditions min typ max unit gain bandwidth product gbp r l =100k ? 1.0 mhz slew rate (note 2) sr g=1, 2v step, c l =100pf, r l =10k ? 0.40 v/s phase margin m r l =100k ? 67 degrees total harmonic distortion+noise thd+n f=1khz, g=1, v in =1v pp r l =10k ? , c l =100pf -70 db voltage noise density e n f=1khz 27 hz nv / note 2: number specified is the positive slew rate.
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 9 azv831/2 5.0v dc electrical characteristics v cc =5.0v, v ee =0, v out =v cc /2, v cm =v cc /2, t a =25 c, unless otherwise noted. parameter symbol conditions min typ max unit input offset voltage v os 0.5 2.5 mv input bias current i b 1.0 pa input offset current i os 1.0 pa input common-mode voltage range v cm -0.3 5.3 v common-mode rejection ratio cmrr v cm =-0.3v to 3.8v 70 85 db v cm =-0.3v to 5.3v 65 90 large signal voltage gain g v r l =1k ? to v cc /2, v out =0.2v to 4.8v 80 92 db r l =10k ? to v cc /2, v out =0.05v to 4.95v 85 98 input offset voltage drift ? v os / ? t 2.0 v/ c output voltage swing from rail v ol /v oh r l =1k ? to v cc /2 25 50 mv r l =10k ? to v cc /2 4 15 output current sink i sink v out =v cc 100 150 ma source i source v out =0v 110 185 closed-loop output impedance f=1khz, a v =1 9 ? power supply rejection ratio psrr v cc =1.6v to 5.0v 66 80 db supply current (per amplifier) i cc v out =v cc /2, i out =0 70 90 a 5v ac electrical characteristics v cc =5.0v, v ee =0, v out =v cc /2, v cm =v cc /2, t a =25c, unless otherwise noted. parameter symbol conditions min typ max unit gain bandwidth product gbp r l =100k ? 1.0 mhz slew rate (note 2) sr 2v step, c l =100pf, r l =10k ? 0.45 v/s phase margin m r l =100k ? 67 degrees thd+n thd+n f=1khz, a v =1, v in =1v pp r l =10k ? ,c l =100pf -70 db voltage noise density e n f=1khz 27 hz nv / note 2: number specified is the positive slew rate.
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 10 azv831/2 typical performance characteristics figure 4. supply current vs. temperature figure 5. supply current vs. supply voltage figure 6. input offset voltage vs. figure 7. input offset voltage vs. input common mode voltage input common mode voltage -0.5 0.0 0.5 1.0 1.5 2.0 -6 -5 -4 -3 -2 -1 0 1 input common mode voltage (v) v cc =1.6v input offset voltage (mv) t a =-40 o c t a =25 o c t a =85 o c -0.5 0.0 0.5 1.0 1.5 2.0 2.5 -6 -5 -4 -3 -2 -1 0 1 input common mode voltage (v) v cc =1.8v input offset voltage (mv) t a =-40 o c t a =25 o c t a =85 o c 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 50 100 150 200 250 dual amplifiers v out =v cc /2 i out =0ma t a =-40 o c t a =25 o c t a =85 o c supply current ( a) supply voltage (v) -40-20 0 20406080100120 80 100 120 140 160 180 200 220 240 260 dual amplifiers v cc =5.0v v cc =3.0v v cc =1.8v v cc =1.6v no load v out =1/2v cc supply current ( a) temperature ( o c)
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 11 azv831/2 typical performance characteristics (continued) figure 8. input offset voltage vs. figure 9. input offset voltage vs. input common mode voltage input common mode voltage figure 10. output voltage vs. output current figure 11. output voltage vs. output current 01234 -6 -5 -4 -3 -2 -1 0 1 v cc =3.0v input offset voltage (mv) input common mode voltage (v) t a =-40 o c t a =25 o c t a =85 o c 0123456 -6 -4 -2 0 2 4 v cc =5.0v input offset voltage (mv) input common mode voltage (v) t a =-40 o c t a =25 o c t a =85 o c 0.1 1 10 1 10 100 1000 v cc =1.6v, v ee =0v output voltage to supply rail (mv) output current (ma) sink current source current 0.1 1 10 1 10 100 1000 v cc =1.8v, v ee =0v output voltage to supply rail (mv) output current (ma) sink current source current
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 12 azv831/2 typical performance characteristics (continued) figure 12. output voltage vs. output current figure 13. output voltage vs. output current figure 14. output short circuit current vs. temperature figure 15. output s hort circuit current vs. temperature 0.01 0.1 1 10 1 10 100 1000 v cc =3.0v, v ee =0v output voltage to supply rail (mv) output current (ma) sink current source current 0.01 0.1 1 10 100 1 10 100 1000 10000 v cc =5.0v, v ee =0v output voltage to supply rail (mv) output current (ma) sink current source current -40-20 0 20406080100 0 20 40 60 80 100 120 140 160 v ee =0v v out short to v cc output short circuit current (sink) (ma) temperature ( o c) v cc =1.6v v cc =1.8v v cc =3.0v v cc =5.0v -40-20 0 20406080100 0 20 40 60 80 100 120 140 160 180 200 v ee =0v v out short to v ee output short circuit current (source) (ma) temperature ( o c) v cc =1.6v v cc =1.8v v cc =3.0v v cc =5.0v
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 13 azv831/2 typical performance characteristics (continued) figure 16. output short circuit current figure 17. output short circuit current vs. supply voltage vs. supply voltage figure 18. output voltage swing vs. supply voltage figure 19. output voltage swing vs. supply voltage 12345 0 20 40 60 80 100 120 output short circuit current (sink) (ma) supply voltage (v) v ee =0v v out short to v cc 12345 0 20 40 60 80 100 120 140 160 output short circuit current (source) (ma) supply voltage (v) v ee =0v v out short to v ee 0.81.01.21.41.61.82.02.22.42.6 1.5 2.0 2.5 3.0 3.5 4.0 r l =10k ? output voltage to supply rail (mv) dual supply voltage (v) positive swing negative swing 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 20 21 22 23 24 25 26 27 r l =1k ? output voltage to supply rail (mv) dual supply voltage (v) positive swing negative swing
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 14 azv831/2 typical performance characteristics (continued) figure 20. output voltage swing vs. temperature figure 21. ou tput voltage swi ng vs. temperature figure 22. gain and phase vs. frequency figure 23. gain and phase vs. frequency with resistive load with capacitive load -40-20 0 20406080100 12 16 20 24 28 32 36 40 44 48 negative swing r l =1k ? output voltage to supply rail (mv) temperature ( o c) v cc =0.8v,v ee =-0.8v v cc =2.5v,v ee =-2.5v v cc =0.8v,v ee =-0.8v v cc =2.5v,v ee =-2.5v positive swing -40 -20 0 20 40 60 80 100 0 1 2 3 4 5 6 7 8 9 10 positive swing r l =10k ? v cc =0.9v,v ee =-0.9v v cc =1.5v,v ee =-1.5v v cc =0.9v,v ee =-0.9v v cc =1.5v,v ee =-1.5v output voltage to supply rail (mv) temperature ( o c) negative swing 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =0.8v, v ee =-0.8v open loop gain (db) frequency (hz) r l =100k ? r l =10k ? r l =1k ? r l =8 ? phase margin (degree) 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =0.8v, v ee =-0.8v r l =100k ? open loop gain (db) frequency (hz) c l =100pf c l =200pf c l =300pf phase margin (degree)
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 15 azv831/2 typical performance characteristics (continued) figure 24. gain and phase vs. frequency figure 25. gain and phase vs. frequency with capacitive load with resistive load figure 26. gain and phase vs. frequency figure 27. gain and phase vs. frequency with capacitive load with capacitive load 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =0.8v, v ee =-0.8v r l =10k ? open loop gain (db) frequency (hz) c l =100pf c l =200pf c l =300pf phase margin (degree) 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =0.9v, v ee =-0.9v open loop gain (db) frequency (hz) r l =100k ? r l =10k ? r l =1k ? r l =8 ? phase margin (degree) 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =0.9v, v ee =-0.9v r l =100k ? open loop gain (db) frequency (hz) c l =100pf c l =200pf c l =300pf phase margin (degree) 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =0.9v, v ee =-0.9v r l =10k ? open loop gain (db) frequency (hz) c l =100pf c l =200pf c l =300pf phase margin (degree)
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 16 azv831/2 typical performance characteristics (continued) figure 28. gain and phase vs. frequency figure 29. gain and phase vs. frequency with resistive load with capacitive load figure 30. gain and phase vs. frequency figure 31. gain and phase vs. frequency with capacitive load with resistive load 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =1.5v, v ee =-1.5v open loop gain (db) frequency (hz) r l =100k ? r l =10k ? r l =1k ? r l =8 ? phase margin (degree) 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =1.5v, v ee =-1.5v r l =100k ? open loop gain (db) frequency (hz) c l =100pf c l =200pf c l =300pf phase margin (degree) 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =1.5v, v ee =-1.5v r l =10k ? open loop gain (db) frequency (hz) c l =100pf c l =200pf c l =300pf phase margin (degree) 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =2.5v, v ee =-2.5v open loop gain (db) frequency (hz) r l =100k ? r l =10k ? r l =1k ? r l =8 ? phase margin (degree)
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 17 azv831/2 typical performance characteristics (continued) figure 32. gain and phase vs. frequency figure 33. gain and phase vs. frequency with capacitive load with capacitive load figure 34. output impedance vs. frequency figure 35. thd+n vs. output voltage 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =2.5v, v ee =-2.5v r l =100k ? open loop gain (db) frequency (hz) c l =100pf c l =200pf c l =300pf phase margin (degree) 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =2.5v, v ee =-2.5v r l =10k ? open loop gain (db) frequency (hz) c l =100pf c l =200pf c l =300pf phase margin (degree) 100 1k 10k 100k 1 10 100 1000 v cc =1.6v to 5v v ee =0v a v =1 a v =10 a v =100 output impedance ( ? ) frequency (hz) 0.01 0.1 1 1e-3 0.01 0.1 1 10 a v =1, r l =10k ? , c l =100pf thd+n (%) output voltage (v) v cc =0.8v,v ee =-0.8v v cc =0.9v,v ee =-0.9v v cc =1.5v,v ee =-1.5v v cc =2.5v,v ee =-2.5v
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 18 azv831/2 typical performance characteristics (continued) figure 36. thd+n vs. frequency figure 37. input voltage noise density v in v in 50mv/div 50mv/div v out v out 50mv/div 50mv/div time (2 s/div) time (2 s/div) figure 38. small signal pulse response figure 39. small signal pulse response 100 1k 10k 1e-3 0.01 0.1 1 bandwidth<10hz to 22khz v out =100mv rms , a v =1, r l =10k ? , c l =100pf thd+n (%) frequency (hz) v cc =0.8v, v ee =-0.8v v cc =0.9v, v ee =-0.9v v cc =1.5v, v ee =-1.5v v cc =2.5v, v ee =-2.5v 100 1k 10k 10n 100n v cc =5.0v, v ee =0v, a v =1 input voltage noise (v/ hz) frequency (hz) c l =100pf, r l =100k ? , a v =1 c l =100pf, r l =100k ? , a v =1 v cc =1.6v v ee =0v v cc =1.8v v ee =0v
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 19 azv831/2 typical performance characteristics (continued) v in v in 50mv/div 50mv/div v out v out 50mv/div 50mv/div time (2 s/div) time (2 s/div) figure 40. small signal pulse response figure 41. small signal pulse response v in v in 500mv/div 500mv/div v out v out 500mv/div 500mv/div time (10 s/div) time (10 s/div) figure 42. large signal pulse response figure 43. large signal pulse response c l =100pf, r l =100k ? , a v =1 c l =100pf, r l =100k ? , a v =1 c l =200pf, r l =100k ? , a v =1 c l =200pf, r l =100k ? , a v =1 v cc =3.0v v ee =0v v cc =5.0v v ee =0v v cc =1.6v v ee =0v v cc =1.8v v ee =0v
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 20 azv831/2 typical performance characteristics (continued) v in v in 1v/div 2v/div v out v out 1v/div 2v/div time (10 s/div) time (10 s/div) figure 44. large signal pulse response figure 45. large signal pulse response v in v in 500mv/div 500mv/div v out v out 500mv/div 500mv/div time (10 s/div) time (10 s/div) figure 46. large signal pulse response figure 47. large signal pulse response c l =200pf, r l =100k ? , a v =1 c l =200pf, r l =10k ? , a v =1 v cc =3.0v v ee =0v v cc =5.0v v ee =0v c l =200pf, r l =100k ? , a v =1 v cc =1.6v v ee =0v v cc =1.8v v ee =0v c l =200pf, r l =10k ? , a v =1
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 21 azv831/2 typical performance characteristics (continued) v in v in 1v/div 2v/div v out v out 1v/div 2v/div time (10 s/div) time (10 s/div) figure 48. large signal pulse response figure 49. large signal pulse response v in v in 1v/div 50mv/div v out v out 1v/div 1v/div time (200 s/div) time (20 s/div) figure 50. no phase reversal figure 51. overload recovery time f=1khz, r l =10k ? , v in =6v pp, a v =1 v out v in c l =100pf, r l =100k ? , a v =-50 v in =0 to -100mv v cc =3.0v v ee =0v c l =200pf, r l =10k ? , a v =1 v cc =5.0v v ee =0v c l =200pf, r l =10k ? , a v =1 v cc =2.5v v ee =-2.5v v cc =2.5v v ee =-2.5v
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 22 azv831/2 typical performance characteristics (continued) v in 50mv/div v out 1v/div time (20 s/div) figure 52. overload recovery time c l =100pf, r l =100k ? , a v =-50, v in =0 to -100mv v cc =2.5v v ee =-2.5v
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 23 azv831/2 mechanical dimensions sc-70-5 unit: mm(inch) 2.000(0.079) 2.200(0.087) 2.150(0.085) 2.450(0.096) 1.150(0.045) 1.350(0.053) 0.650(0.026)typ 1.200(0.047) 1.400(0.055) 0.150(0.006) 0.350(0.014) 0.525(0.021)ref 0.080(0.003) 0.150(0.006) 0 8 0.200(0.008) 0.260(0.010) 0.460(0.018) 0.000(0.000) 0.100(0.004) 0.900(0.035) 1.000(0.039) 0.900(0.035) 1.100(0.043)
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 24 azv831/2 mechanical dimensions (continued) sot-23-5 unit: mm(inch) 2.820(0.111) 2 . 6 5 0 ( 0 . 1 0 4 ) 1 . 5 0 0 ( 0 . 0 5 9 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 0.300(0.012) 0.950(0.037) 0 . 9 0 0 ( 0 . 0 3 5 ) 0.100(0.004) 0.200(0.008) 0 . 3 0 0 ( 0 . 0 1 2 ) 8 0 3.020(0.119) 1 . 7 0 0 ( 0 . 0 6 7 ) 2 . 9 5 0 ( 0 . 1 1 6 ) 0.400(0.016) 0 . 1 5 0 ( 0 . 0 0 6 ) 1 . 3 0 0 ( 0 . 0 5 1 ) 0.200(0.008) 0 . 6 0 0 ( 0 . 0 2 4 ) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p 1 . 4 5 0 ( 0 . 0 5 7 ) m a x
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 25 azv831/2 mechanical dimensions (continued) soic-8 unit: mm(inch)
preliminary datasheet single/dual low bias current, low voltage, rail-to-rail input/output cmos operational amplifiers jul. 2012 rev. 1. 0 bcd semiconductor manufacturing limited 26 azv831/2 mechanical dimensions (continued) msop-8 unit: mm(inch) 4.700(0.185) 5.100(0.201) 0.410(0.016) 0.650(0.026) 0 . 0 0 0 ( 0 . 0 0 0 ) 0 . 2 0 0 ( 0 . 0 0 8 ) 3 . 1 0 0 ( 0 . 1 2 2 ) 2 . 9 0 0 ( 0 . 1 1 4 )
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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